Ponente
Prof.
Robert L. Byer
(Stanford University)
Descripción
Laser acceleration in dielectric structures offers a new approach to the next generation of accelerators. The recently demonstrated gradient of 300MeV/m is a first step toward an accelerator system with all essential elements designed to be fabricated on a chip using modern lithographic methods. Progress on beam position and the future possibilities of X-ray generation with a dielectric undulator will be discussed.
Autor primario
Prof.
Robert L. Byer
(Stanford University)
