Ponente
Sra.
Currás Rivera Esteban
(Instituto de Física de Cantabria (CSIC-UC))
Descripción
Position sensitivity in semiconductor detectors of ionizing radiation is usually achieved by the segmentation of the sensing diode junction in many small sensing elements read out separately as in the case of conventional microstrips and pixel detectors. Alternatively, position sensitivity can be obtained by splitting the ionization signal collected by one single electrode amongst more than one readout channel with the ratio of the collected charges depending on the position where the signal was primary generated. Following this later approach, we implemented the resistive charge division method in a conventional microstrip detector to obtain position sensitivity along the strip. We manufactured a proof-of-concept demonstrator where the conventional aluminum electrodes were replaced by slightly resistive electrodes made of strongly doped poly-crystalline silicon and being readout at both strip ends. Here, we partially summarize the laser, radioactive source and test beam characterization of this first proof-of-concept demonstrator. Among other applications, we study the feasibility of this technology on the implementation of very long microstrip sensors for the future linear collider detectors.
Autor primario
Sra.
Currás Rivera Esteban
(Instituto de Física de Cantabria (CSIC-UC))
Coautores
Dr.
David Quirion
(IMB-CNM, CSIC)
Sra.
Francisca J. Muñoz Sánchez
(Instituto de Física de Cantabria (CSIC-UC))
Dr.
Giulio Pellegrini
(IMB-CNM (CSIC))
Dr.
Ivan Vila Alvarez
(Instituto de Física de Cantabria (CSIC-UC))
Prof.
Manuel Lozano
(IMB-CNM (CSIC))
Dr.
Marcos Fernandez
(Instituto de Física de Cantabria (CSIC-UC))
Dr.
Richard Jaramillo
(Instituto de Física de Cantabria (CSIC-UC))
Dr.
Salvador Hidalgo
(IMB-CNM (CSIC))
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