Ponente
Descripción
Silicon photomultipliers (SiPMs) have become an excellent option for photon detection, emerging as a strong alternative to traditional photomultiplier tubes in various fields of high-energy physics. Although they offer numerous advantages, such as high gain, excellent temporal resolution, and insensitivity to magnetic fields, SiPMs also have some drawbacks, the most notable being correlated noise and device non-linearity. The study of these issues has been one of the research lines pursued by the High Energy Group (GAE) at UCM in recent years [1,2,3,4]. This presentation will discuss the results of GAE's work in understanding and addressing these problems.
To model non-linearity, a mathematical expression is proposed that relates the number of incident photons to the charge released by SiPMs for light pulses of arbitrary shape and intensity. This expression introduces a simple model for the charge recovery of SiPM microcells after an initial avalanche, which remains valid even after hundreds of avalanches in the same microcell. This expression also takes into account various factors that affect the response of SiPMs, such as the finite number of cells, correlated noise, and the shape of the incident light pulse. To study such a high level of saturation a detailed Monte Carlo simulation code was developed. Both the code and the expression have been validated by comparison with experimental data.
To characterize correlated noise, detailed software tools are being developed for waveform analysis, they are also useful for other typical measurements associated with SiPMs such as dark current rate and PDE. These tools can produce very clear finger plots as well as identify different kinds of correlated noise
Finally, the collaborations that GAE has had with other research groups will also be discussed, where these tools have begun to be used, as well as future work in this line of research.
[1] L. Gallego, J. Rosado, F. Blanco and F. Arqueros, Modelling crosstalk in silicon photomultipliers, 2013 JINST 8 P05010.
[2] J. Rosado and S. Hidalgo, “Characterization and modeling of crosstalk and afterpulsing in Hamamatsu silicon photomultipliers,” J. Instrum., vol. 10, Oct. 2015, Art. no. P10031. doi: 10.1088/1748-0221/10/10/P10031.
[3] Rosado, Jaime. (2019). Modeling the Nonlinear Response of Silicon Photomultipliers. IEEE Sensors Journal. PP. 1-1. 10.1109/JSEN.2019.2938018.
[4] Moya-Zamanillo, V.; Rosado, J. Understanding the Nonlinear Response of SiPMs. Sensors 2024, 24, 2648. https://doi.org/10.3390/s24082648
Abstract
This presentation will cover the work on silicon photomultipliers (SiPMs) carried out by the High Energy Group (GAE) at the Complutense University of Madrid (UCM). The two main issues with SiPMs will be discussed: correlated noise, where software tools for a detailed analysis of its different components will be presented, and non-linearity, where a model for the response of SiPMs to light pulses of arbitrary shape and intensity will be introduced.
