Ponente
Descripción
The TPA-TCT (Two Photon Absorption-Transient Current Technique) is a characterization method used to investigate semiconductor devices, particularly silicon radiation detectors, with high resolution. This technique involves using lasers with a wavelength in the quadratic absorption regime to generate a confined excess charge carrier density around the focal point, enabling probing of the silicon bulk with three-dimensional resolution. TPA-TCT allows for the measurement of parameters like depletion voltage, device thickness, charge collection time, collected charge, and electric field in a three-dimensional manner.
In this contribution we will introduce the technique and illustrate its use for the characterization of several sensing technologies such as CMOS pixels, LGAD, wideband semiconductor pin diodes, etc.
