Seminars IFIC

Active silicon for physics at a Super B Factory

por Francesco Forti (INFN-Pisa)

→ Europe/Madrid
Sala Seminarios IFIC (Edf. Institutos de Investigación)

Sala Seminarios IFIC

Edf. Institutos de Investigación

Descripción
The current B Factories physics program has been extremely successful in advancing fundamental heavy quark physics and setting limits on new physics. A future high luminosity Super B Factory can refine these measurements and has the potential of measuring coupling and phases of new physics. After outlining the physics program of a Super B Factory and summarizing the machine and detector challenges I will concentrate on silicon tracking and vertexing issues. Given the high rate and the low momentum of particles, tracking and vertexing detectors require fine segmentation and low material budget. Most silicon pixel and strip detectors installed in high energy physics experiments today use separate substrates and different fabrication technologies for the charge collection and amplification devices. This hybrid approach has been very successful because it allows the separate optimization of the charge detector and the amplifier, but requires sophisticated interconnection techniques and in general causes an increase in the thickness as well as the mechanical complexity of the detector elements. Since many years, researchers have investigated the possibility of fabricating both the charge collection and the amplification elements on the same substrate to realize monolithic silicon detectors. I will review the several approaches to the problem that have been tried and summarize the current status. I will then discuss the most interesting future directions of the R&D, and in particular the development of monolithic active pixel detectors using commercial CMOS technology and their application for the Super B Factory physics program.