The development of functional thin films is crucial for enhancing electronic device performance, but conventional vacuum-based fabrication methods are costly and energy-intensive. In this context, Mist Chemical Vapor Deposition (Mist-CVD) has been developed, allowing for the growth of metal oxides in a simple and cost-effective manner.
In this seminar, we present the fundamental principles of the Mist-CVD system installed in our laboratory for obtaining gallium and indium sesquioxides, as well as their alloys. Additionally, we propose a systematic parametric study aimed at optimizing the growth conditions and providing a detailed morphological and structural characterization of the obtained materials.
Benedito Donizeti Botan Neto
José Luis Rodrigo Ramón