Metal-organic Chemical Vapour Deposition (MOCVD) is a widespread growth technique used to manufacture a wide variety of semiconductors. Central to MOCVD is the selection of carrier gas, where precursors are diluted, which plays a pivotal role in influencing critical growth parameters such as heat distribution, fluid dynamics, or species transport within the reactor. In this work, the implications of the carrier gas choice in the growth of the ternary alloy CdZnO have been assessed both numerically and experimentally. Firstly, a physical model of the reactor has been developed using COMSOL Multiphysics and then, the simulation results have been experimentally tested by performing a set of parametric studies comprising the growth and posterior characterization of the samples.
Pablo Martínez Reviriego