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SUMMARY:A compact and low cost dosimetry system based on MOSFET
DTSTART;VALUE=DATE-TIME:20130624T100000Z
DTEND;VALUE=DATE-TIME:20130624T101500Z
DTSTAMP;VALUE=DATE-TIME:20261015T210159Z
UID:indico-contribution-8744@indico.ific.uv.es
DESCRIPTION:Speakers: Miguel Angel Carvajal Rodriguez (UGR\, Department of
  Electronics)\nIn this work we present a handheld dosimetry system for rad
 iotherapy developed at the Departmento de Eléctronica y Tecnología de la
  Computación of the Universidad de Granada in collaboration with the Depa
 rtmento de Física Atómica\, Molecular y Nuclear also from Universidad de
  Granada and the Hospital Universitario "San Cecilio" of Granada. \n\nThe 
 use of MOSFET dosimeters for in-vivo dosimetry has increased notably in th
 e last few years due to some advantages such as their immediate and non-de
 structive readouts\, low power consumption\, easy calibration\, and reason
 able sensitivity and reproducibility [1]. The basis of these devices is th
 at the absorbed dose is approximately proportional to the shifts in the th
 reshold voltage of the MOSFET [2]. \n\nIn our dosimetry system a general p
 urpose commercial pMOS transistor is used as sensor to detect the ionizing
  radiation. This implies an important cost reduction. The reader unit impl
 ements several algorithms that permit to extend the linear range above men
 tioned [2] and to carry out a thermal compensation [3]. Thanks to these al
 gorithms\, and it can be seen in table 1\, the resolution of system makes 
 it feasible for in-vivo dosimetry even with the commercial transistor we h
 ave used [4]. Three groups of four dosimeters were irradiated in a 60Co so
 urce and in a LINAC with normal incidence with qualities photons of 6 and 
 18MV. The correlation factors found for these dosimeters ware\, at least\,
  0.993\, and the medium sensitivity are summarized in the table 1.\n\nTabl
 e 1: Technical specifications \n------------------------------------------
 -------------------------------------------------------------------\nTempe
 rature range 20–36 ºC                 Thermal drift \n\nhttps://indico.
 ific.uv.es/event/744/contributions/8744/
LOCATION:Centro Nacional de Aceleradores (CNA)
URL:https://indico.ific.uv.es/event/744/contributions/8744/
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